Numerical Approach of Single-Junction InGaN Solar Cell Affected by Carrier Lifetime and Temperature

Abstract

The PC1D simulation aand origin software were successfully used for the study of Carrier Lifetime and Temperature effect on InGaN Single-Junction Solar Cell. For the simulation, the total device area was 100 cm², dielectric constant 13.1, band gap 1.35eV, intrinsic constant is 1×10¹⁰ cm^-3, doping concentration is 1×10¹⁷ cm^-3, electron number and hole number 1000 and 170 respectively, and the refractive index was 3.58. The optimized temperature and bulk recombination were 25°C and 1000μs respectively along with the efficiency of 18.258 % for both n and p - InGaN solar cell. Several graphs were plotted under the following conditions: a) bulk recombination time of p-InGaN and temperature are kept constant at 1000 μs and 25°C, the variation of bulk recombination time of n - type InGaN solar cell with base current and voltage, maximum current and voltage, and efficiency and maximum power were studied. b) bulk recombination time of n-InGaN and temperature are kept constant at 1000 μs and 25°C, the variation of bulk recombination time of p - type InGaN solar cell with base current and voltage, maximum current and voltage, and efficiency and maximum power were studied.