Electrical Properties of Rare Earth Chalcogenides Under the Effect of Pressure
DOI:
https://doi.org/10.3126/kuset.v3i1.66854Keywords:
Conductivity, Resistivity, Trivalent, Carrier effecitve mass and mobilityAbstract
The numerical analysis of electrical properties involved in transport mechanism such as carrier concentration, carrier mobility, carrier effective mass, electrical resistivity and electrical conductivity for some rare earth chalcogenides is discussed. The formulae are derived and used to obtain numerical values of these electrical parameters, which are useful to describe the electrical behavior (insulating, semiconducting and metallic) of rare earth chalcogenides.
Downloads
Downloads
Published
How to Cite
Issue
Section
License
Copyright (c) 2007 Kathmandu University Journal of Science, Engineering and Technology
![Creative Commons License](http://i.creativecommons.org/l/by-sa/4.0/88x31.png)
This work is licensed under a Creative Commons Attribution-ShareAlike 4.0 International License.
This license enables reusers to distribute, remix, adapt, and build upon the material in any medium or format, so long as attribution is given to the creator. The license allows for commercial use. If you remix, adapt, or build upon the material, you must license the modified material under identical terms.